ROHM SemiconductorīM63764S-VC is a 600 V / 15 A intelligent IGBT (IPM) power supply module for high-speed switching units in a 25-pin HSDIP package. The pilot circuit works with two independent inputs. A bootstrap technique is used to ensure proper driving of the high-side power switch.
ON Semiconductor’s NCP510x devices are high-voltage gate drivers with two outputs for direct driving of 2 N-channel or IGBT power MOSFETs arranged in a half-bridge configuration (version B) or any other high-side configuration plus low- side (version A).
Figure 5: typical application circuit of the SID11x2K ON Semiconductor The controller signals (PWM and fault) are compatible with the CMOS 5 V logic, which can also be adjusted to 15 V levels by using an external resistance divider (figure 5). Additional features include short circuit protection (DESAT) with Advanced Soft Shut Down (ASSD) and minimum voltage block (UVLO). An isolated unipolar voltage source provides positive and negative voltages for gate control. An innovative FluxLink technology provides reinforced galvanic insulation. SID11x2K Scale iDriver is a single-channel IGBT and MOSFET driver in an eSOP package. Power Integrations offers a variety of gate driver solutions for the motor drive market up to 6500 V. Figure 4: block diagram of the 2ED020I06-FI Power Integrations Propagation delays are combined to simplify use in high-frequency applications (figure 4). All logic inputs are compatible with 3.3 V and 5 V TTL. 2ED020I06-FI is a high voltage, high-speed power MOSFET, and IGBT driver with a high pulse current buffer stage designed for minimal conduction. The single-channel galvanically isolated gate driver IC 1EDF5673K is fitted for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage. The robust gate drive protection features such as fast short-circuit protection (DESAT), make these driver ICs suitable for both silicon and broadband power supplies, including CoolGaN ™ and CoolSiC ™. The EiceDRIVER™ gate drivers offer a wide range of typical output current options, from 0.1 A to 10 A. Figure 3: block diagram of the L6385E Infineon L6385E is equipped with UVLO protection on both guide sections, ensuring more excellent protection against voltage drops on the power lines (Figure 3). The L6385E device provides two input pins and two output pins and ensures that the outputs alternate in phase with the inputs. The high-side section can operate with voltage rails up to 600 V. L6385E is a compact and straightforward high voltage gate driver, made with the BCD™ technology and capable of driving a power MOSFET or IGBT devices. L6491, L6494 and L6498 are particularly suitable for medium and highĬapacity power switches due to their current capacity up to 4 A. The ST gate driver family is designed to operate in harsh industrialĮnvironments with high voltages up to 600 V, maintaining good noise Figure 2: typical application circuit of the DRV8323x ST Microelectronics Gate drivers include a charge pump to generate an elevated gate voltage (with duty cycle support up to 100%) for high-side transistors and a linear regulator to supply low-side transistors (figure 2). The DRV8323x family is available in three independent gate drivers, which are capable of driving a high-side and low-side MOSFET pair. TheĬurrent parameter of the adjustable gate drive is called IDRIVE (figure Texas Instruments Smart Gate drivers incorporateĪ current layout to control the speed of MOSFET variation easily. Them to reduce bill of materials counting and provide additional This feature allowsĭesigners to optimize EMI switching and performance, but it also allows Smart Instrument Drive from Texas Instrument offers a smart solutionĪimed at driving and protecting the power MOSFET. Providing a high gate drive voltage to ensure that the MOSFET has There is a wide range of integrated gate drivers on the market, Modular motor control solutions offer an alternative, and To offer an intelligent solution to drive the power semiconductorĬorrectly. Include, the gate driver must be robust and flexible, and must be able Given the variety of external MOSFETs that a typical circuit can The gate driver acts as an intermediate stageīetween the logic level control inputs and the power MOSFETs. Improve the performance of external power MOSFETs to feed the current toĪn electric motor. The gate driver in an engine control system is primarily designed to Units, the two units are separated to facilitate thermal management and
MOSFET are usually integrated into a unit. In low voltage projects, the gate driver and The microcontroller sets the PWM duty cycle and takes care of feedback Microcontroller, a gate driver and MOSFETs in a half-bridge topology.
A complete engine control system includes a power supply, a host